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US 9,178,051 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorMan-jong Yu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an active region on a semiconductor substrate. The active region is defined by a device isolation layer and includes gate-recesses. The semiconductor device further includes gate electrodes in the gate-recesses, a contact recess in the active region between the gate-recesses, a cell pad that covers at least a portion of the active region between the gate-recesses and that fills at least a portion of the contact recess, and a bit line electrically connected to the cell pad.
Claims15
A semiconductor device, comprising:
- an active region on a semiconductor substrate, the active region being defined by a device isolation layer and including gate-recesses;
- gate electrodes and a capping layer in the gate-recesses;
- a contact recess in a portion of the active region between the gate-recesses, the contact recess defining at least one side surface of the active region facing and spaced apart from a side surface of the capping layer;
- a cell pad that covers at least the portion of the active region between the gate-recesses and that fills at least a portion of the contact recess, at least a portion of the cell pad contacting the active region between the side surface of the active region and the side surface of the capping layer;
- and
- a bit line electrically connected to the cell pad.
3 more elements
A semiconductor device, comprising:
- an active region on a semiconductor substrate, the active region being defined by a device isolation layer and including at least one gate-recess;
- a gate electrode in the gate-recess;
- a contact that contacts at least a portion of an upper surface of the active region, at least a portion of a lateral surface of the active region, and at least a portion of a lateral surface of a layer in the gate-recess, the contact being between the lateral surface of the active region and the lateral surface of the layer in the gate-recess;
- and
- a bit line connected to the contact.
2 more elements
Dependencies are inferred from the claim text.