Integrated circuit devices including FinFETS and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBorna J. Obradovic, Robert C. Bowen, Mark S. Rodder
Life of this patent
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Abstract
Integrated circuit devices including fin field-effect transistors (finFETs) and methods of forming the same are provided. The methods may include forming a fin-shaped channel region including germanium on a substrate and forming a source/drain region adjacent the channel region on the substrate. The methods may further include forming a barrier layer contacting sidewalls of the channel region and the source/drain region, and the barrier layer may include SixGe1-x, and x may be in a range of about 0.05 to about 0.2.
Claims22
A method of forming a finFET, the method comprising:
- forming a fin-shaped channel region comprising germanium on a substrate;
- forming a source/drain region adjacent the channel region on the substrate;
- and
- forming a barrier layer comprising opposing sidewalls contacting sidewalls of the channel region and the source/drain region, respectively, wherein the barrier layer comprises SixGe1-x, and x is in a range of about 0.05 to about 0.2.
A method of forming a finFET, the method comprising:
- forming a fin-shaped channel region comprising germanium on a substrate;
- forming a source/drain region adjacent the channel region on the substrate;
- and
- forming a barrier layer contacting sidewalls of the channel region and the source/drain region, wherein the barrier layer comprises SixGe1-x, and x is in a range of about 0.05 to about 0.2, and wherein forming the channel region and the barrier layer comprises:
- forming a preliminary channel region on the substrate;
- forming a first mask pattern on a first portion of the preliminary channel region;
- implanting silicon ions into the preliminary channel region using the first mask pattern as an implantation blocking mask;
- forming a second mask pattern on the first portion of the preliminary channel region after implanting the silicon ions;
- and
- etching the preliminary channel region using the second mask pattern as an etching mask to form the channel region and the barrier layer.
A method of forming a finFET, the method comprising:
- forming a fin-shaped channel region comprising germanium on a substrate;
- forming a source/drain region on a sidewall of the channel region on the substrate;
- and
- forming a barrier layer between the sidewall of the channel region and a sidewall of the source/drain region, wherein:
- the barrier layer comprises silicon and germanium;
- and
- a germanium concentration in the barrier layer is less than a germanium concentration in the channel region.
Dependencies are inferred from the claim text.