Non-planar transistors with replacement fins and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKa-Hing Fung
Life of this patent
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Abstract
A method includes forming a first semiconductor fin, and oxidizing surface portions of the first semiconductor fin to form a first oxide layer. The first oxide layer includes a top portion overlapping the first semiconductor fin and sidewall portions on sidewalls of the first semiconductor fin. The top portion of the first oxide layer is then removed, wherein the sidewall portions of the first oxide layer remains after the removing. The top portion of the first semiconductor fin is removed to form a recess between the sidewall portions of the first oxide layer. An epitaxy is performed to grow a semiconductor region in the recess.
Claims20
A method comprising:
- forming a first semiconductor fin;
- oxidizing surface portions of the first semiconductor fin to form a first oxide layer, wherein the first oxide layer comprises a top portion overlapping the first semiconductor fin and sidewall portions on sidewalls of the first semiconductor fin;
- removing the top portion of the first oxide layer, wherein the sidewall portions of the first oxide layer remain after the removing;
- removing a top portion of the first semiconductor fin to form a recess between the sidewall portions of the first oxide layer;
- and
- performing an epitaxy to grow a semiconductor region in the recess.
A method comprising:
- forming a first semiconductor fin and a second semiconductor fin;
- oxidizing surface portions of the first and the second semiconductor fins simultaneously to form a first oxide layer and a second oxide layer, respectively;
- covering the second oxide layer;
- removing a top portion of the first oxide layer to expose the first semiconductor fin;
- removing a top portion of the first semiconductor fin to form a recess between opposite sidewall portions of the first oxide layer;
- performing an epitaxy to grow a semiconductor region in the recess;
- removing remaining portions of the first oxide layer;
- forming a first gate dielectric on a top surface and sidewalls of the semiconductor region;
- forming a first gate electrode over the first gate dielectric;
- and
- forming a second gate electrode over the second oxide layer.
A method comprising:
- forming a dielectric layer comprising:
- a top portion overlapping a first semiconductor fin;
- and
- sidewall portions contacting sidewalls of the first semiconductor fin;
- removing the top portion of the dielectric layer to expose the first semiconductor fin, wherein the sidewall portions of the dielectric layer remain after the removing;
- recessing the first semiconductor fin to form a recess between the sidewall portions of the dielectric layer;
- and
- performing an epitaxy to grow a semiconductor region in the recess.
Dependencies are inferred from the claim text.