Crystalline thin-film transistor
AssigneeGlobalfoundries Inc.
InventorsBahman Hekmatshoartabari, Ning Li, Devendra K. Sadana, Davood Shahrjerdi
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Abstract
A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions. A gate stack is formed between the source and drain regions, and contacts are formed to the source and drain regions and the gate stack through a passivation layer.
Claims20
A method for forming a thin film transistor, comprising:
- joining a crystalline substrate to an insulating substrate by layer transfer and bonding;
- depositing a doped layer on an entire upper surface of the crystalline substrate after said joining of the crystalline substrate to the insulating substrate;
- patterning the doped layer after said depositing the doped layer on the crystalline substrate to remove the portion of the doped layer that is present directly on a channel portion of the crystalline substrate, and to form source and drain regions, wherein an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions;
- forming a gate stack between the source and drain regions;
- and
- forming contacts to the source and drain regions and the gate stack through a passivation layer.
A method for forming a thin film transistor for displays, comprising:
- joining a crystalline substrate to an insulating substrate by layer transfer and bonding;
- depositing a doped layer on an entire upper surface of the crystalline substrate after said joining a crystalline substrate to the insulating substrate;
- patterning the doped layer after said depositing the doped layer on the crystalline substrate to remove the portion of the doped layer that is present directly on a channel portion of the crystalline substrate and to form source and drain regions;
- patterning the crystalline substrate to form an active area such that a conductive channel is formed in the crystalline substrate between the source and drain regions;
- forming a gate stack between the source and drain regions;
- forming contacts to the source and drain regions and the gate stack through a first passivation layer;
- forming one or more metallization layers to provide lines for connecting components;
- and
- depositing and patterning a transparent conductor on the insulating substrate to form pixel electrodes.
Dependencies are inferred from the claim text.