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US 9,178,031 B2Granted
Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics
AssigneeIntermolecular, Inc.
InventorJinhong Tong
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Abstract
Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.
Claims18
A semiconductor device, comprising
- a silicon-containing substrate;
- a gate dielectric layer, wherein the gate dielectric layer comprises a first sub-layer formed above the substrate and a second sub-layer formed above the first sub-layer, wherein the first sub-layer consists of erbium oxide, and the second sub-layer comprises hafnium oxide;
- and
- a gate electrode formed above the gate dielectric layer.
1 more element
A semiconductor device, comprising
- a silicon-containing substrate;
- a gate dielectric layer, wherein the gate dielectric layer comprises a first sub-layer formed directly on the substrate and a second sub-layer formed above the first sub-layer, wherein the first sub-layer consists of erbium oxide, and the second sub-layer comprises hafnium oxide;
- and
- a gate electrode formed above the gate dielectric layer.
1 more element
Dependencies are inferred from the claim text.