Thin film transistor and display panel employing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-hun Jeon, I-hun Song, Chang-jung Kim, Seung-eon Ahn
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AssigneeSamsung Electronics Co., Ltd.
InventorsSang-hun Jeon, I-hun Song, Chang-jung Kim, Seung-eon Ahn
Estimating the term…
A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.
A display panel comprising a plurality of pixels each comprising a display cell and a driving transistor that controls an on and off operation of the display cell, wherein the driving transistor comprises:
An optical touch display panel comprising a plurality of pixels each comprising a driving transistor that controls an on and off operation of the display cell, an optical sensing transistor that senses incident light, and a switch transistor that outputs data from the optical sensing transistor, and at least one of the driving transistor, the optical sensing transistor, and the switch transistor comprises:
Dependencies are inferred from the claim text.