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US 9,178,029 B2Granted
Forming a VTFT gate using printing
AssigneeEastman Kodak Company
InventorsShelby Forrester Nelson, Carolyn Rae Ellinger
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Abstract
A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure. A polymeric resist is printed that wicks along the reentrant profile of the gate structure. The conformal conductive inorganic thin film is etched in areas not protected by the polymeric resist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.
Claims8
A method of forming a gate layer of a thin film transistor comprising:
- providing a substrate including a gate structure having a reentrant profile;
- depositing a conformal conductive inorganic thin film over the gate structure;
- printing a polymeric resist that wicks along the reentrant profile of the gate structure due to capillary action;
- and
- etching the conformal conductive inorganic thin film in areas not protected by the polymeric resist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.
2 more elements
Dependencies are inferred from the claim text.