Semiconductor devices and methods fabricating same
AssigneeSamsung Electronics Co., Ltd.
InventorJungwoo Seo
Life of this patent
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Abstract
Disclosed are semiconductor devices and methods of forming the same. According to the semiconductor device, gate structures are provided to be buried in a substrate and first dopant regions and second dopant regions are provided at both ends of the gate structures. Conductive lines cross the gate structures and are connected to the first dopant regions. Contact structures are respectively provided in contact holes which are provided between the conductive lines and expose the second dopant regions. The contact structures are in contact with the second dopant regions, respectively. Each of the contact structures includes a pad pattern extending along a sidewall of the contact hole.
Claims17
A semiconductor device comprising:
- a gate structure;
- a first dopant region and second dopant region disposed in a substrate on opposing ends of the gate structure;
- a conductive line crossing the gate structure and electrically connected to the first dopant region;
- a contact structure disposed in a contact hole provided between the conductive line and an exposed portion of the second dopant region,
- wherein the contact structure includes;
- a pad pattern having a bottom portion, and a pair of sidewall portions respectively extending from the bottom portion, and
- a lower contact pattern disposed on the pad pattern, such that the pad pattern is provided along a bottom surface and a sidewall of the lower contact pattern;
- a fence pattern provided on the substrate and crossing the conductive line, wherein a location of the contact hole is defined by the conductive line and the fence pattern, where a portion of the sidewall of the lower contact pattern contacts the fence pattern.
A semiconductor device comprising:
- a gate structure;
- a first dopant region and second dopant region disposed in a substrate on opposing ends of the gate structure;
- a conductive line crossing the gate structure and electrically connected to the first dopant region;
- a contact structure disposed in contact hole provided between the conductive line and an exposed portion of the second dopant region, wherein the contact structure includes a pad pattern having a bottom portion and a pair of sidewall portions respectively extending from the bottom portion;
- and
- a spacer structure disposed between the conductive line and contact structure, wherein the spacer structure includes an air gap.
Dependencies are inferred from the claim text.