Low-resistance electrode design
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Michael Shur, Remigijus Gaska
Life of this patent
Estimating the term…
Abstract
A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.
Claims27
A semiconductor device comprising:
- a first electrode and a second electrode to a semiconductor structure of the device, wherein each electrode includes a current feeding contact and a plurality of fingers extending therefrom, and wherein the plurality of fingers of the first and second electrodes are adjacent to each other in an alternating pattern, and wherein a depth, dFING, for each end finger satisfies dFING≧3*LTR, and a depth for each and every interior finger satisfies dFING≧6*LTR, where LTR is a characteristic contact transfer length for a junction between the fingers and the semiconductor device.
A semiconductor device comprising:
- a first electrode and a second electrode to a semiconductor structure of the device, wherein each electrode includes a current feeding contact and a plurality of fingers extending therefrom, and wherein the plurality of fingers of the first and second electrodes are adjacent to each other in an alternating pattern, and wherein an effective width, W, of each pair of adjacent fingers of the first electrode and the second electrode satisfies γFING*W≦2, where γFING=√{square root over (2ZFING/ZSC)}, and where ZFING is an impedance of at least one finger per unit width and ZSC is an impedance of a portion of the semiconductor structure between the pair of adjacent fingers per unit width.
A semiconductor device comprising:
- a first electrode and a second electrode to a semiconductor structure of the device, wherein each electrode includes a current feeding contact and a plurality of fingers extending therefrom, and wherein the plurality of fingers of the first and second electrodes are adjacent to each other in an alternating pattern, and wherein a total length of the interface between the first and second electrodes, LCMB, satisfies LCMB*γCMB≦2, where γCMB=√{square root over (2ZCMB/ZFINGSC)}, and where ZCMB is an impedance of the current feeding contact per unit width and ZFINGSC is an impedance of a pair of adjacent fingers with the semiconductor structure there between per unit width.
Dependencies are inferred from the claim text.