Two terminal switching device having bipolar switching property, method of fabricating the same, and resistive memory cross-point array having the same
AssigneePostech Academy-Industry Foundation
InventorsHyunsang Hwang, Ji Yong Woo
Life of this patent
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Abstract
Provided are a two-terminal switching device having a bidirectional switching property, and a resistive memory cross-point array including the same. The two-terminal switching device includes a first electrode. A first tunneling barrier layer is disposed on the first electrode. An oxide semiconductor layer is disposed on the first tunneling barrier layer. A second tunneling barrier layer is disposed on the oxide semiconductor layer. A second electrode is disposed on the second tunneling barrier layer.
Claims21
A two-terminal switching device, comprising:
- a first electrode;
- a first tunneling barrier layer disposed on the first electrode;
- an oxide semiconductor layer disposed on the first tunneling barrier layer;
- a second tunneling barrier layer disposed on the oxide semiconductor layer;
- a second electrode disposed on the second tunneling barrier layer,
- wherein the first tunneling barrier layer and the second tunneling barrier layer are different material layers.
A method of fabricating a two-terminal switching device, comprising:
- forming a first electrode;
- forming a first tunneling barrier layer on the first electrode;
- forming a metal layer on the first tunneling barrier layer;
- forming an oxide semiconductor layer and a second tunneling barrier layer sequentially stacked on the first tunneling barrier layer by performing an oxygen treatment on the metal layer;
- and
- forming a second electrode on the second tunneling barrier layer;
- wherein the first tunneling barrier layer and the second tunneling barrier layer are different material layers.
A resistive memory cross-point array, comprising:
- a first electrode;
- a switching layer including a first tunneling barrier layer, an oxide semiconductor layer, and a second tunneling barrier layer sequentially disposed on the first electrode;
- a second electrode disposed on the switching layer;
- a variable resistance layer disposed on the second electrode;
- and
- a third electrode disposed on the variable resistance layer,
- wherein the first tunneling barrier layer and the second tunneling barrier layer are different material layers.
Dependencies are inferred from the claim text.