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US 9,178,020 B2Granted
Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device
AssigneeSamsung Electronics Co., Ltd.
InventorsByoung-lyong Choi, Eun-kyung Lee, Dong-mok Whang
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Abstract
A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.
Claims13
A method of manufacturing a graphene device, the method comprising:
- sequentially forming a growth layer and a protective layer on a substrate;
- forming at least one first groove penetrating the protective layer and the growth layer to expose side surfaces of the growth layer and the protective layer and an upper surface of the substrate, and second and third grooves penetrating the protective layer to expose side surfaces of the protective layer and an upper surface of the growth layer;
- forming at least one channel by growing at least one first graphene layer on the side surfaces of the growth layer exposed by the at least one first groove;
- and
- forming first and second electrodes by growing a second graphene layer on the upper surface of the growth layer exposed by the second and third grooves.
2 more elements
A graphene device comprising:
- at least one channel comprising a first graphene layer;
- and
- first and second electrodes connected to two ends of the at least one channel and comprising a second graphene layer,
- wherein the first graphene layer is disposed only in a plane not parallel to the second graphene layer, and the only graphene layer to which the first graphene layer is electrically connected is the second graphene layer in the first and second electrodes.
1 more element
Dependencies are inferred from the claim text.