Semiconductor device with edge termination and method for manufacturing a semiconductor device

A semiconductor device, comprising:

• a semiconductor body;
• a first semiconductor material formed in the semiconductor body and comprising at least a first doping region of a first conductivity type and at least a second doping region of a second conductivity type arranged below the first doping region with respect to an uppermost surface of the semiconductor body, the first and second doping regions forming a horizontal pn-junction in the first semiconductor material which is substantially parallel to the uppermost surface of the semiconductor body;
• and
• a second semiconductor material formed in the semiconductor body, having a band gap larger than a band gap of the first semiconductor material, and comprising at least a first doping region of the first conductivity type adjacent to and in contact with each of the first and second doping regions of the first semiconductor material, the first doping region of the second semiconductor material extending deeper into the semiconductor body, with respect to the uppermost surface of the semiconductor body, than the first doping region of the first semiconductor material.

A semiconductor device, comprising:

• a semiconductor body;
• a silicon semiconductor material formed in the semiconductor body and comprising at least a first doping region of a first conductivity type and at least a second doping region of a second conductivity type in contact with the first doping region and arranged below the first doping region with respect to an uppermost surface of the semiconductor body;
• a horizontal pn-junction in the silicon semiconductor material formed between the first and second doping regions of the silicon semiconductor material;
• a high band-gap semiconductor material formed in the semiconductor body and comprising a first doping region of the first conductivity type adjacent to and in contact with each of the first and second doping regions of the silicon semiconductor material, and a second doping region of the second conductivity type in contact with the first doping region of the high band-gap semiconductor material;
• and
• a substantially vertical pn-junction in the high band-gap semiconductor material formed between the first and second doping regions of the high band-gap semiconductor material, the vertical pn-junction extending deeper into the semiconductor body, with respect to the uppermost surface of the semiconductor body, than the horizontal pn- junction.

A method for manufacturing a semiconductor device, comprising:

• providing a semiconductor body comprising a first semiconductor material having a second doping region of a second conductivity type;
• forming a first doping region of a first conductivity type in the first semiconductor material to form a first pn-junction between the first doping region and the second doping region of the first semiconductor material;
• forming a trench in the semiconductor body extending from an uppermost surface of the semiconductor body through the first pn-junction to a depth below the first pn-junction;
• filling the trench at least partially with a second semiconductor material having a band gap larger than a band gap of the first semiconductor material, by heteroepitaxial deposition of the second semiconductor material onto the first semiconductor material, to form part of an edge termination zone of the semiconductor device;
• and forming a second pn-junction with the second semiconductor material such that the second pn-junction extends deeper into the semiconductor body than the first pn-junction in the first semiconductor material, by forming a first doping region of the first conductivity type in the second semiconductor material so that the first doping region of the second semiconductor material is in contact with the first doping region of the first semiconductor material, wherein the first doping region of the second semiconductor material extends deeper into the semiconductor body than the first doping region of the first semiconductor material.