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US 9,178,012 B2Granted
Plated trench capacitor structures
AssigneeGlobalfoundries U.S. 2 LLC
InventorsVeeraraghavan S. Basker, Richard Q. Williams
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Abstract
A method and structure is directed to eDRAM cells with high-conductance electrodes. The method includes forming upper layers on a semiconductor substrate and forming an opening in the upper layers. The method further includes forming a trench in the semiconductor substrate, aligned with the opening. The method further includes forming a metal plate on all exposed surface in the trench by applying a metallic aqueous solution with an electrical bias to a backside of the semiconductor substrate.
Claims9
A structure, comprising:
- a semiconductor substrate;
- a trench in the semiconductor substrate and in alignment with an opening in a plurality of upper layers covering the semiconductor substrate;
- a conformal metal plate lining exposed surfaces of the trench;
- a dielectric liner on the conformal metal plate;
- a metal inner electrode on the dielectric liner;
- a contact in contact with the metal inner electrode;
- and
- an oxide cap within the opening and on any exposed top surfaces of the conformal metal plate, the dielectric liner, and the metal inner electrode,
- wherein the contact extends through the oxide cap and into contact with at least a portion of the metal inner electrode.
6 more elements
Dependencies are inferred from the claim text.