Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate

A method for forming a capacitor, the method comprising forming a seed layer;

• forming a first dielectric layer over the seed layer,
• wherein the first dielectric layer is formed with a first crystallographic orientation,
• wherein a thickness of the first dielectric layer is between 50 nm and 500 nm,
• wherein the first dielectric layer has an anisotropic dielectric constant property,
• wherein the anisotropic dielectric constant property is characterized as having a first dielectric constant value in a first crystallographic direction and a second dielectric constant value in a second crystallographic direction,
• wherein the first dielectric constant value is greater than the second dielectric constant value, and
• wherein the first crystallographic direction is parallel to a lateral surface of the first dielectric layer or perpendicular to the lateral surface of the first dielectric layer;
• forming a first conductive layer over the first dielectric layer;
• forming a second dielectric layer over the first conductive layer,
• wherein the composition of the second dielectric layer is the same as the composition of the first dielectric layer,
• wherein the second dielectric layer is formed with the first crystallographic orientation;
• and
• forming a second conductive layer over the second dielectric layer.