Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications

A method for forming a capacitor stack comprising:

• forming a flash layer above a first electrode layer;
• forming a first dielectric layer above the flash layer, wherein the first dielectric layer comprises metal oxide, wherein the first dielectric layer comprises a dopant, and wherein the dopant comprises silicon;
• inserting a high band gap fourth dielectric layer within the first dielectric layer during the forming of the first dielectric layer;
• forming a high band gap second dielectric layer above the first dielectric layer;
• forming a third dielectric layer above the high band gap second dielectric layer, wherein the third dielectric layer comprises metal oxide, wherein the third dielectric layer comprises a second dopant, and wherein the second dopant comprises silicon;
• and
• forming a capping layer above the third dielectric layer, wherein the flash layer and the capping layer each comprise titanium oxide.