Resistive random access memory cells having shared electrodes with transistor devices

A resistive random access memory (ReRAM) cell comprising:

• a first conductive layer comprising titanium nitride;
• a second conductive layer comprising n+ doped polysilicon;
• and a variable resistance layer comprising one of HfO2, Ta2Os, or Al2O3, Y2O3, or ZrO2, wherein the first conductive layer and the second conductive layer are operable as electrodes;
• wherein the variable resistance layer disposed between the first conductive layer and the second conductive layer;
• and
• the first conductive layer being operable as an conductive layer of at least one other device,
• wherein the first conductive layer is operable as a drain of a field effect transistor (FET) configured to control a flow of an electrical current through the ReRAM cell, and wherein the FET is one of the two other devices, and
• wherein a thickness of the variable resistance layer is substantially the same as a thickness of a Rate dielectric of the FET,
• wherein the first conductive layer is operable as a bottom electrode of one or more additional devices different from the FET,
• wherein the one or more additional devices comprise at least one of a pinched resistor, a bipolar junction transistor, a junction gate field-effect transistor, a silicon on insulator device, a fully depleted silicon on insulator device, a self-aligned double-gate MOSFET (FinFET) device, a diode, or an additional ReRAM cell.