Non-volatile memory device and production method thereof

A method of producing a non-volatile storage device, comprising the steps of:

• (a) forming, on a first conductive layer formed on a semiconductor substrate, a first select transistor including a first channel layer electrically connected to the first conductive layer, and a first gate line formed on a sidewall of the first channel layer through a first insulator film, and extended in a first direction along a main surface of the semiconductor substrate;
• (b) forming, on the first channel layer, a second select transistor including a second channel layer electrically connected to the first channel layer, and a second gate line formed on a sidewall of the second channel layer through a second insulator film, and extended in the first direction;
• (c) forming a first stacked film on the second select transistor by alternately stacking (N+1) (N is an integer of N≧1) third insulator films and the N first semiconductor layers;
• (d) forming a plurality of first patterns aligned in a second direction orthogonal to the first direction and extended in the first direction by processing the first stacked film;
• (e) forming a third channel layer and a memory material layer which are electrically connected to the second channel layer through a fourth insulting film on the respective sidewalls of the plurality of first patterns;
• (f) exposing an upper surface of the third channel layer after a fifth insulator film is embedded between the plurality of adjacent first patterns;
• and
• (g) after the (f) step, forming, on the third channel layer, a plurality of lines electrically connected to the third channel layer, aligned in the first direction, and extending in the second direction, and then removing the third channel layer immediately below a region between the plurality of adjacent lines.