Memory device
AssigneeSony Corporation
InventorsGabriele Nelles, Silvia Rosselli, Mustafa Sarpasan, Nikolaus Knorr
Life of this patent
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Abstract
Microelectronic device, comprising a substrate, a first electrode arranged above the substrate, a first resistive switch and a resistivity structure coupled with each other, wherein the first resistive switch and the resistivity structure are arranged in a single layer of the device, and a second electrode arranged above the layer that includes the first resistive switch and the resistivity structure, wherein the first resistive switch and the resistivity structure are coupled with the first and the second electrode.
Claims13
A microelectronic device, comprising:
- a substrate;
- a first electrode arranged above the substrate;
- a first resistive switch and a resistivity structure coupled with each other, the first resistive switch and the resistivity structure being arranged in a same layer of the device;
- a second electrode arranged above the layer that includes the first resistive switch and the resistivity structure;
- and
- an isolator material arranged between the first electrode and the second electrode at a location including an area in which the first electrode and the second electrode cross each other, the isolator material being adjacent the first resistive switch and the resistivity structure,
- wherein the isolator material, the first resistive switch and the resistivity structure are located in the same layer, and
- wherein the first resistive switch and the resistivity structure are coupled with the first and the second electrode.
A method of fabricating a microelectronic device, Comprising:
- forming a first electrode on a substrate,
- forming a first resistive switch and a resistivity structure in a same layer of the device including depositing a resistive switching material,
- forming an isolator material, and
- forming a second electrode above the layer including the first resistive switch and the resistivity structure,
- wherein the first electrode and the second electrode are in contact with the first resistive switch and the resistivity structure,
- wherein the isolator material is adjacent the first resistive switch and the resistivity structure and between the first electrode and the second electrode in an area where the first electrode and the second electrode cross each other, and
- wherein the isolator material, the first resistive switch and the resistivity structure are located in the same layer.
Dependencies are inferred from the claim text.