Imaging device
AssigneeKabushiki Kaisha Toshiba
InventorsIkuo Fujiwara, Hideyuki Funaki, Kenji Todori, Akira Fujimoto, Tsutomu Nakanishi, Kenji Nakamura
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Abstract
A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.
Claims8
An imaging device, comprising:
- a photo detector provided in a semiconductor substrate;
- a first photoelectric conversion layer provided above the photo detector;
- a plurality of first metal dots provided above the first photoelectric conversion layer;
- a second photoelectric conversion layer provided above the first metal dots;
- and
- a plurality of second metal dots provided above the second photoelectric conversion layer,
- wherein each of the first and second metal dots includes an upper metal member and a lower metal member each having a different width, and a width of the upper metal member of one of the first and second metal dots, which is more distant from a face from which light is incident, is the same as a width of the lower metal member of the other, which is closer to the face from which light is incident.
Dependencies are inferred from the claim text.