Isolation for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-I Hsu, Min-Feng Kao, Jen-Cheng Liu, Dun-Nian Yaung, Tzu-Hsuan Hsu, Wen-De Wang
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Abstract
A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
Claims13
A semiconductor device comprising:
- an isolation region in a substrate, the isolation region comprising a first type of dopants with a first conductivity;
- a first source/drain region laterally separated from the isolation region, the first source/drain region having a second conductivity different from the first conductivity, wherein the first source/drain region extends from a planar surface of the substrate to a first depth and the isolation region extends from the planar surface of the substrate past the first depth;
- and
- a dielectric material located over the isolation region and extending laterally no farther than the first source/drain region.
A semiconductor device comprising:
- a first implant region and a second implant region within a substrate;
- an isolation region between the first implant region and the second implant region, wherein the isolation region is located a lateral distance away from both the first implant region and the second implant region;
- a dielectric material over the substrate and extending from the first implant region to the second implant region but not extending over the first implant region or the second implant region, the dielectric material being located over the isolation region, wherein the dielectric material is planar along an entire interface with the substrate;
- a first gate stack adjacent the first implant region;
- and
- a second gate stack adjacent the second implant region on an opposite side of the isolation region from the first gate stack.
Dependencies are inferred from the claim text.