Solid-state imaging device and electronic instrument
AssigneeSony Corporation
InventorsYasunori Sogoh, Hiroyuki Ohri
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.
Claims10
A solid-state imaging device comprising:
- a semiconductor well region of a first conduction type;
- a first semiconductor region of the first conduction type in the semiconductor well region, the first semiconductor region having an impurity concentration different than that of the semiconductor well region;
- an isolation dielectric region on the first semiconductor region;
- a photoelectric conversion part having a second semiconductor region of a second conduction type that is non-overlapping with the first semiconductor region in plan view;
- pixel transistors in the first semiconductor region;
- a floating diffusion region of the second conduction type in the semiconductor well region;
- and
- a depletion region between the first semiconductor region and the floating diffusion region.
A solid-state imaging device comprising:
- a semiconductor well region of a first conduction type;
- a first semiconductor region of the first conduction type in the semiconductor well region, the first semiconductor region having an impurity concentration different than that of the semiconductor well region;
- a photoelectric conversion part having a second semiconductor region of a second conduction type that is non-overlapping with the first semiconductor region in plan view;
- pixel transistors in the first semiconductor region;
- a floating diffusion region of the second conduction type in the semiconductor well region;
- and
- a depletion region between the first semiconductor region and the floating diffusion region.
Dependencies are inferred from the claim text.