TFT substrate and method of repairing the same
AssigneeChunghwa Picture Tubes, Ltd.
InventorHan-Tung Hsu
Life of this patent
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Abstract
A thin film transistor (TFT) substrate includes: a substrate; a plurality of scan lines, disposed on the substrate; a plurality of data lines, disposed across the scan lines; a scan line insulting layer disposed between the scan lines and the data lines; a plurality of thin film transistors, each of thin film transistors disposed on an intersection of each scan line and each data line; a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines; and a common electrode, disposed on the data line insulting layer, and comprising a plurality of positioning through holes, wherein the positioning through holes expose the data line insulting layer, and are located right above the data lines.
Claims13
A thin film transistor (TFT) substrate, comprising:
- a substrate;
- a plurality of scan lines, disposed on the substrate;
- a plurality of data lines, disposed across the scan lines;
- a scan line insulting layer disposed between the scan lines and the data lines;
- a plurality of thin film transistors, each of the thin film transistors disposed on an intersection of each scan line and each data line;
- a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines;
- and
- a common electrode, disposed above the data line insulting layer, and comprising a plurality of positioning through holes, wherein the positioning through holes are located right above the data lines, a top view of the positioning through hole is a rectangle shape, and a width of the positioning through hole is larger than a width of the data line.
A thin film transistor (TFT) substrate, comprising:
- a substrate;
- a plurality of scan lines, disposed on the substrate;
- a plurality of data lines, disposed across the scan lines;
- a scan line insulting layer disposed between the scan lines and the data lines;
- a plurality of thin film transistors, each of the thin film transistors disposed on an intersection of each scan line and each data line;
- a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines;
- and
- a common electrode, disposed above the data line insulting layer, and comprising a plurality of positioning through holes, wherein the positioning through holes are located right above the data lines, a top view of the positioning through hole is a circular shape, and the diameter of the positioning through hole is larger than a width of the data line.
A thin film transistor (TFT) substrate, comprising:
- a substrate;
- a plurality of scan lines, disposed on the substrate;
- a plurality of data lines, disposed across the scan lines;
- a scan line insulting layer disposed between the scan lines and the data lines;
- a plurality of thin film transistors, each of thin film transistors disposed on an intersection of each scan line and each data line;
- a data line insulting layer, disposed on a top surface of the scan line insulting layer and used to cover the data lines;
- and
- a common electrode, disposed above the data line insulting layer, and comprising a plurality of positioning through holes, wherein the positioning through holes are located right above the data lines,
- wherein the common electrode further comprises a plurality of bar-shaped through holes, wherein the bar-shaped through holes are located above the pixel area, parts of the bar-shaped through holes are communicated with parts of the positioning through holes, and a part of the common electrode and the other part of the common electrode are electrically insulated from each other.
Dependencies are inferred from the claim text.