US 9,177,969 B2Granted

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsDaisuke Kubota, Ryo Hatsumi, Masami Jintyou, Takumi Shigenobu, Naoto Goto

Life of this patent

Estimating the term…

Loading patent…

Abstract

A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Claims21

Dependent claims

A semiconductor device comprising:

a transistor comprising a semiconductor film over a substrate;
a pixel portion over the substrate;
a first light-transmitting conductive film over the substrate in the pixel portion;
a first insulating film over the semiconductor film and the first light-transmitting conductive film, the first insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;
a second insulating film over the first insulating film and the first light-transmitting conductive film;
a second light-transmitting conductive film over the second insulating film in the pixel portion;
and
an alignment film over the second light-transmitting conductive film, the alignment film comprising a first alignment region, wherein the first alignment region and the opening overlap each other,
wherein in the first alignment region, an angle between a surface of the substrate and a surface of the first alignment region is less than or equal to 45°, and
wherein the semiconductor film is light-transmitting.

7 more elements

A semiconductor device comprising:

a first insulating film over a substrate;
a transistor over the substrate, the transistor comprising a semiconductor film, wherein the semiconductor film overlaps the first insulating film;
a pixel portion over the substrate;
a first light-transmitting conductive film over the first insulating film in the pixel portion;
a second insulating film over the semiconductor film and the first light-transmitting conductive film, the second insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;
a third insulating film over the second insulating film and the first light-transmitting conductive film;
a second light-transmitting conductive film over the third insulating film in the pixel portion;
and
a planarization film over the second light-transmitting conductive film, wherein the planarization film and the opening overlap each other,
wherein the semiconductor film and the first light-transmitting conductive film is light-transmitting,
wherein the first insulating film comprises a first gate insulating film and a second gate insulating film,
wherein the second gate insulating film is over the first gate insulating film, and
wherein the second gate insulating film is capable of oxygen release.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/656,285Filed 12 Mar 2015 · continuation
Priority: JP 2013-01625730 Jan 2013
Published: US 2015/0187819 A12 Jul 2015
Granted: 3 Nov 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification32 codes

G06F 3/0446
By capacitive means: using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
G02F 1/13306
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements: circuit arrangements or driving methods for the control of…
G02F 1/133305
Constructional arrangements; Manufacturing methods: flexible substrates, e.g. plastics, organic film
G02F 1/133345
Constructional arrangements; Manufacturing methods: insulating layers

Family

Application14/161,975Parent of this continuation · filed 23 Jan 2014
US 2015/0187819 A1Pre-grant publication · published 2 Jul 2015
US 8,981,374 B2Parent of this continuation
US 2014/0209897 A1Published application
US 9,177,969 B2This patent

From the US filing history. Foreign family members aren’t listed.