Schottky clamped radio frequency switch

A radio frequency switch with a clamped body comprising:

• a channel separating a source and a drain of the radio frequency switch;
• a first clamp region of a semiconductor material that:
• (i) spans the channel;
• (ii) comprises a first contact region extending into the source;
• and (iii) comprises a second contact region extending into the drain;
• a first silicide region formed on the first contact region;
• and
• a second silicide region formed on the second contact region;
• wherein the first clamp region of the semiconductor material has a lower dopant concentration than both the source and the drain;
• wherein the first clamp region, the source, and the drain are all doped with a lightly doped drain implant that has a moderate implant concentration;
• wherein the source and drain are also doped with a heavy implant that has a heavy implant concentration;
• wherein the lower dopant concentration is less than a dopant concentration of the source and drain by at least the difference between the moderate implant concentration and the heavy implant concentration;
• wherein the first contact region forms a first Schottky diode barrier with the first silicide region;
• and
• wherein the second contact region forms a second Schottky diode barrier with the second silicide region.

A radio frequency switch comprising:

• a gate that comprises a gate electrode and a gate insulator;
• a channel that:
• (i) is located in a body of the radio frequency switch;
• and (ii) is insulated from the gate electrode by the gate insulator;
• a first doped region located across the channel from a second doped region;
• a third region that:
• (i) spans the channel;
• (ii) extends into the first and second doped regions;
• and (iii) has a lower dopant concentration than the first and second doped regions;
• a first silicide region that forms a first Schottky diode junction with the third region;
• and
• a second silicide region that:
• (i) is located across the channel from the first silicide region;
• and (ii) forms a second Schottky diode with the third region;
• wherein the third region extends into the first doped region along a first portion of a width of the channel;
• wherein the third region extends into the second doped region along a second portion of the width of the channel;
• and
• wherein the first portion of the width is larger than the second portion of the width.