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US 9,177,965 B2Granted
Nonvolatile memory device in three-dimensional structure with a stress reducing materials on the channel
AssigneeSamsung Electronics Co., Ltd.
InventorsChanghyun Lee, Sung-II Chang, Byoungkeun Son
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Abstract
A nonvolatile memory device includes a substrate, a stacked structure with conductive materials and first insulating materials and the conductive materials and the first insulating materials are alternately stacked on the substrate, and a plurality of pillars in contact with the substrate and the pillars extend through the stacked structure in a direction perpendicular to the substrate. The device also includes information storage layers between the conductive materials and the first insulating materials, and second insulating materials between the first insulating materials and the pillars.
Claims10
A nonvolatile memory device, comprising:
- a substrate;
- a stacked structure including conductive materials and first insulating materials, the conductive materials and the first insulating materials being alternately stacked on the substrate;
- a plurality of pillars in contact with the substrate, the pillars extending through the stacked structure in a direction perpendicular to the substrate;
- blocking insulating layers between the conductive materials and the first insulating materials;
- and
- second insulating materials between each of the first insulating materials and each of the pillars such that each of the first insulating materials is spaced apart from each of the pillars, each of the second insulating material contacting only one of the first insulating materials,
- wherein the first insulating materials consist of silicon nitride.
4 more elements
A nonvolatile memory device, comprising:
- a substrate;
- a stacked structure including conductive materials and first insulating materials, the conductive materials and the first insulating materials being alternately stacked on the substrate, and the first insulating materials consisting of silicon nitride;
- a plurality of pillars in contact with the substrate, the pillars extending through the stacked structure in a direction perpendicular to the substrate;
- second insulating materials between each of the first insulating materials and each of the pillars such that each of the first insulating materials is spaced apart from each of the pillars, each of the second insulating material contacting only one of the first insulating materials;
- first silicon oxide layers on outer side surfaces of the pillars, the first silicon oxide layers extending through the stacked structure in the direction perpendicular to the substrate;
- charge trapping layers on outer side surfaces of the first silicon oxide layers, the charge trapping layers extending through the stacked structure in the direction perpendicular to the substrate;
- and
- second silicon oxide layers disposed between the conductive materials and the charge trapping layers and extending onto top and bottom surfaces of the conductive materials between the conductive materials and the first insulating materials.
5 more elements
A nonvolatile memory device, comprising:
- a stacked structure on a substrate, the stacked structure including conductive materials and first insulating materials alternately stacked on the substrate, and the first insulating materials consisting of silicon nitride;
- a plurality of pillars in contact with the substrate, the pillars extending through the stacked structure in a direction perpendicular to the substrate;
- second insulating materials between each of the first insulating materials and each of the pillars such that each of the first insulating materials is spaced apart from each of the pillars, each of the second insulating material contacting only one of the first insulating materials;
- first silicon oxide layers on outer side surfaces of the pillars, the first silicon oxide layers extending through the stacked structure in the direction perpendicular to the substrate;
- charge trapping layers on outer side surfaces of the first silicon oxide layers, the charge trapping layers extending through the stacked structure in the direction perpendicular to the substrate;
- and
- second silicon oxide layers disposed between the conductive materials and the charge trapping layers and extending onto top and bottom surfaces of the conductive materials between the conductive materials and the first insulating materials.
4 more elements
Dependencies are inferred from the claim text.