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US 9,177,958 B2Granted
Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device
AssigneeSK hynix Inc.
InventorsSeong Wan Ryu, Min Soo Yoo
Life of this patent
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Abstract
A vertical semiconductor device having a vertical channel region is disclosed. The vertical semiconductor device includes a pillar having a vertical channel region, a bit line buried in a semiconductor substrate located at a lower part of the pillar, and a body connection unit configured to couple at least one sidewall of the pillar to the semiconductor substrate. As a result, the floating body effect of the vertical semiconductor device can be more effectively removed.
Claims17
A method for forming a vertical semiconductor device comprising:
- forming a first recess by etching a semiconductor substrate;
- forming a bit line at a lower portion of the first recess, the bit line extending in a first direction;
- forming a silicon layer extending from the semiconductor substrate and formed over the semiconductor substrate and the bit line so as to bury the bit line in the semiconductor substrate;
- forming a second recess between adjacent bit lines by etching the silicon layer and the semiconductor substrate, wherein a first sidewall of the etched silicon layer is coupled to the semiconductor substrate;
- forming a pillar by etching the silicon layer along a second direction crossing the bit line;
- and
- forming a gate coupled to a second sidewall of the pillar.
4 more elements
Dependencies are inferred from the claim text.