Isolation region gap fill method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Tang Peng, Tai-Chung Huang, Hao-Ming Lien, Tze-Liang Lee
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Abstract
An isolation region gap fill method comprises depositing a first dielectric material over a semiconductor device through a flowable deposition process or other gap fill deposition processes, wherein the semiconductor device includes a first FinFET comprising a plurality of first fins and a second FinFET comprising a plurality of second fins. The method further comprises removing the first dielectric material between the first FinFET and the second FinFET to form an inter-device gap, depositing a second dielectric material into the inter-device gap and applying an annealing process to the semiconductor device.
Claims13
A method comprising:
- depositing a first dielectric material over a semiconductor device through a flowable deposition process, wherein the semiconductor device includes:
- a first FinFET comprising a plurality of first fins;
- and
- a second FinFET comprising a plurality of second fins;
- removing the first dielectric material between the first FinFET and the second FinFET to form an inter-device gap, wherein the first fins of the first FinFET and the second fins of the second FinFET are directly formed on a silicon substrate during the step of removing the first dielectric material between the first FinFET and the second FinFET;
- depositing a second dielectric material into the inter-device gap;
- and
- applying an annealing process to the semiconductor device.
A method comprising:
- forming a plurality of first fins and a plurality of second fins over a substrate, wherein:
- two adjacent first fins are separated from each other by a first intra-device gap;
- two adjacent second fins are separated from each other by a second intra-device gap;
- and
- the first fins and the second fins are separated by an inter-device gap;
- depositing a liquid-like film in the first intra-device gap, the second intra-device gap and the inter-device gap;
- removing the liquid-like film in the inter-device gap;
- depositing a dielectric material in the inter-device gap;
- and
- performing an annealing process to harden the liquid-like film in the first intra-device gap and the second intra-device gap.
Dependencies are inferred from the claim text.