Semiconductor device
AssigneeSeiko Instruments Inc.
InventorTomomitsu Risaki
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a semiconductor substrate and a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate. A second conductivity type high concentration region is provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region. A first conductivity type high concentration region is provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.
Claims9
A semiconductor device, comprising:
- a semiconductor substrate;
- a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate;
- a second conductivity type high concentration region provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region, the second conductivity type high concentration region being circular;
- an element isolation insulating film provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region, the element isolation insulating film having a ring shape and surrounding the second conductivity type high concentration region without being held in contact therewith;
- and
- a first conductivity type high concentration region provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region;
- and
- an element isolation insulating film provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region, the element isolation insulating film having a ring shape and surrounding the second conductivity type high concentration region without being held in contact therewith.
A semiconductor device, comprising:
- a semiconductor substrate;
- a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate;
- a second conductivity type high concentration region provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region, the second conductivity type high concentration region being circular;
- a first conductivity type high concentration region provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region;
- and
- an element isolation insulating film provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region, the element isolation insulating film having a ring shape and surrounding the second conductivity type high concentration region without being held in contact therewith.
A semiconductor device, comprising:
- a semiconductor substrate;
- a first conductivity type low concentration region provided on the semiconductor substrate;
- a second conductivity type high concentration region provided near a surface within the first conductivity type low concentration region;
- a first conductivity type high concentration region provided on the surface within the first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region, the first conductivity type high concentration region and the second conductivity type high concentration region being separated from one another by a portion of the first conductivity type low concentration region disposed therebetween and in which a trench structure does not surround the second conductivity type high concentration region;
- and
- an element isolation insulating film provided on the surface within the first conductivity type low concentration region, the element isolation insulating film having a ring shape and surrounding the second conductivity type high concentration region without being held in contact therewith.
Dependencies are inferred from the claim text.