ESD protection with asymmetrical bipolar-based device

An electronic apparatus comprising:

• a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type;
• a pair of terminals supported by the semiconductor substrate;
• and
• a dual polarity electrostatic discharge (ESD) protection device disposed in the semiconductor layer and comprising first and second bipolar transistor devices and inner and outer sinker regions having a second conductivity type and extending through the semiconductor layer to reach the buried insulator layer;
• wherein the inner sinker region is configured as a common collector region of the first and second bipolar transistor devices;
• wherein the outer sinker region is disposed between the second bipolar transistor device and a lateral periphery of the dual polarity ESD protection device;
• and
• wherein the first and second bipolar transistor devices are configured in an asymmetrical arrangement in which conduction of the first bipolar transistor device is triggered by breakdown at a first junction along the inner sinker region and in which conduction of the second bipolar transistor device is triggered by breakdown at a second junction along the outer sinker region.