Back to results
US 9,177,950 B2Granted
Protective structure and method for producing a protective structure
AssigneeInfineon Technologies AG
InventorsAndre Schmenn, Damian Sojka, Carsten Ahrens
Life of this patent
Estimating the term…
Abstract
Described herein is a protective structure. The protective structure includes a semiconductor substrate, a first diode disposed at least one of in or on the semiconductor substrate and a diode arrangement disposed at least one of in or on the semiconductor substrate. The diode arrangement includes a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode. The diode arrangement is in parallel with the first diode.
Claims14
A protective structure comprising:
- a semiconductor substrate;
- a first diode disposed at least one of in or on the semiconductor substrate;
- a diode arrangement disposed at least one of in or on the semiconductor substrate, wherein the diode arrangement comprises a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode;
- and
- wherein the diode arrangement is in parallel with the first diode.
2 more elements
A method of forming a protective structure comprising:
- providing a semiconductor substrate;
- forming a first diode at least one of in or on the semiconductor substrate;
- forming a diode arrangement at least one of in or on the semiconductor substrate, wherein the diode arrangement comprises a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode;
- and
- wherein the diode arrangement is in parallel with the first diode.
2 more elements
Dependencies are inferred from the claim text.