Reducing thermal energy transfer during chip-join processing

A method for fabricating a semiconductor structure comprising:

• forming an insulating layer having a first surface and a second surface opposite the first surface;
• forming a thermal insulating element extending vertically through the insulating layer from the first surface to the second surface, the thermal insulating element and the insulating layer comprising different insulating materials and the thermal insulating element comprising a thermal insulating material;
• forming a first conductor on the second surface of the insulating layer and immediately adjacent to the thermal insulating element, the forming of the first conductor being performed such that the thermal insulating element is narrower in width than the first conductor;
• forming a solder bump on the first conductor;
• forming a second conductor extending vertically through the insulating layer from the first surface to the second surface such that second conductor is immediately adjacent to the insulating layer, such that a portion of the insulating layer is positioned laterally between the second conductor and the thermal insulating element and such that, after the forming of the first conductor, the second conductor is also immediately adjacent to the first conductor;
• and,
• before the forming of the insulating layer, forming a third conductor,
• the insulating layer, the thermal insulating element, and the second conductor being formed following formation of the third conductor such that the third conductor is on the first surface of the insulating layer and immediately adjacent to the thermal insulating element and the second conductor,
• the thermal insulating element reducing thermal energy transfer during a chip-join process from the solder bump to a metal level included in the semiconductor structure.

A semiconductor structure comprising:

• an insulating layer having a first surface and a second surface opposite the first surface;
• a thermal insulating element extending vertically through the insulating layer from the first surface to the second surface, the thermal insulating element and the insulating layer comprising different insulating materials and the thermal insulating element comprising a thermal insulating material;
• a first conductor on the second surface of the insulating layer and immediately adjacent to the thermal insulating element;
• a solder bump on the first conductor;
• a plurality of second conductors extending vertically through the insulating layer from the first surface to the second surface, the second conductors being immediately adjacent to the first conductor and further being positioned laterally adjacent to the thermal insulating element;
• and
• a third conductor on the first surface of the insulating layer and immediately adjacent to the thermal insulating element and the second conductors,
• the thermal insulating element reducing thermal energy transfer during a chip-join process from the solder bump to a metal level in the semiconductor structure,
• the thermal insulating element being narrower in width than the first conductor and the third conductor and being center aligned with the first conductor and the third conductor, and
• the second conductors being adjacent to opposite sides of the thermal insulating element.