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US 9,177,927 B2Granted
Method of forming a memory device
AssigneeMicron Technology, Inc.
InventorsJohn Moore, Joseph F. Brooks
Life of this patent
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Abstract
A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
Claims18
A method of forming a memory element, comprising the acts of:
- forming circuitry in a memory array;
- forming a plurality of insulating portions over the circuitry;
- forming an electrical connection through said plurality of insulating portions to said circuitry, wherein at least one of the electrical connections comprises a via filled with tungsten;
- etching at least one of said insulating portions to form an etched region;
- forming a bond pad in the etched region;
- plating the bond pad to form a cap over the bond pad;
- forming memory material over the plurality of insulating portions;
- and
- forming an electrode over the memory material.
6 more elements
A method of forming a device having a bond pad, said method comprising:
- forming a bond pad in an area of a dielectric material;
- forming an insulating material over said dielectric material and said bond pad such that said bond pad is not substantially exposed to oxygen;
- removing the insulating material in an area of a surface of the bond pad to expose the bond pad;
- and
- plating the bond pad with a conductive material.
2 more elements
Dependencies are inferred from the claim text.