US 9,177,926 B2 · Semiconductor device and method comprising thickened redistribution layers

Abstract

A method of making a semiconductor package can comprise forming a plurality of thick redistribution layer (RDL) traces over active surfaces of a plurality of semiconductor die that are electrically connected to contact pads on the plurality of semiconductor die, singulating the plurality of semiconductor die comprising the plurality of thick RDL traces, mounting the singulated plurality of semiconductor die over a temporary carrier with the active surfaces of the plurality of semiconductor die oriented away from the temporary carrier, disposing encapsulant material over the active surfaces and at least four side surfaces of each of the plurality of semiconductor die, over the plurality of thick RDL traces, and over the temporary carrier, forming a via through the encapsulant material to expose at least one of the plurality of thickened RDL traces with respect to the encapsulant material, removing the temporary carrier, and singulating the plurality of semiconductor die.

Claims20

Dependent claims

A method of making a semiconductor package, comprising:

forming a plurality of thick redistribution layer (RDL) traces comprising a thickness greater than 20 micrometers over active surfaces of a plurality of semiconductor die that are electrically connected to contact pads on the plurality of semiconductor die;
singulating the plurality of semiconductor die comprising the plurality of thick RDL traces;
mounting the singulated plurality of semiconductor die over a temporary carrier with the active surfaces of the plurality of semiconductor die oriented away from the temporary carrier;
disposing a single encapsulant material over the active surfaces, contacting at least four side surfaces of each of the plurality of semiconductor die, disposed over the plurality of thick RDL traces, and over the temporary carrier;
forming a via through the encapsulant material to expose at least one of the plurality of thick RDL traces with respect to the encapsulant material;
forming a fan-out build-up interconnect structure over the thick RDL and within the via through the encapsulant material, the fan-out build-up structure disposed between the thick RDL and a bump;
removing the temporary carrier;
and
singulating the plurality of semiconductor die.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method comprising thickened redistribution layers

Life of this patent

Semiconductor device and method comprising thickened redistribution layers

Life of this patent

Abstract

Claims20