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US 9,177,923 B2Granted
Through-substrate via shielding
AssigneeInternational Business Machines Corporation
InventorsDaeik Kim, Chandrasekharan Kothandaraman, Chung-Hsun Lin, John M. Safran
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Abstract
A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.
Claims11
A method of using a semiconductor circuit, comprising:
- forming a semiconductor apparatus and connecting a through-substrate via of the semiconductor apparatus to one of a power source and a first signal source, wherein forming the semiconductor apparatus comprises:
- forming a silicon substrate:
- forming an epilayer on the silicon substrate;
- forming an insulator between the silicon substrate and the epilayer;
- forming a semiconductor device in the insulator such that the through-substrate via extends through the silicon substrate and is separated from the silicon substrate by the insulator;
- and
- forming a conductive wall between the through-substrate via and the semiconductor device such that a first end of the conductive wall contacts the epilayer;
- and
- connecting the conductive wall to a constant voltage source.
6 more elements
Dependencies are inferred from the claim text.