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US 9,177,914 B2Granted
Metal pad structure over TSV to reduce shorting of upper metal layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Chuan Tseng, Chia-Wei Liu, Cindy Kuo, Ren-Wei Xiao
Life of this patent
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Abstract
Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.
Claims20
A semiconductor die for bonding with another die, comprising:
- a through substrate via (TSV) formed in a substrate of the semiconductor die;
- and
- a slotted metal pad formed directly over the TSV, wherein the slotted metal pad has a top surface area larger than a top surface area of the TSV, wherein the slotted metal pad has a plurality of metal bars in a first direction, and wherein slots between the plurality of metal bars are filled with a dielectric material to form dielectric bars.
A semiconductor die, comprising:
- a through substrate via (TSV) formed in a substrate of the semiconductor die;
- and
- a slotted metal pad formed directly over the TSV, wherein the slotted metal pad has a top surface area larger than a top surface area of the TSV, wherein the slotted metal pad has a plurality of metal bars in a first direction, and wherein slots between the plurality of metal bars are filled with a dielectric material to form dielectric bars, wherein a first metal bar of the plurality of metal bars at an edge of the slotted metal pad is wider than a second metal bar of the plurality of metal bars away from edges of the slotted metal pad.
A device comprising:
- a semiconductor substrate having a top surface and a bottom surface;
- a through substrate via (TSV) extending from the top surface of the semiconductor substrate, through the substrate, and to the bottom surface of the semiconductor substrate;
- an external connector formed on the bottom surface of the semiconductor substrate and in physical contact with the TSV;
- an interconnect structure formed over the top surface of the semiconductor substrate and in electrical contact with the TSV;
- and
- a slotted metal pad formed directly over the TSV, wherein the slotted metal pad has a plurality of metal bars in a first direction, and wherein slots between the plurality of metal bars are filled with a solid dielectric material to form dielectric bars.
3 more elements
Dependencies are inferred from the claim text.