High-frequency semiconductor package and high-frequency semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiyuki Ikuma, Masatoshi Suzuki
Life of this patent
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Abstract
Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.
Claims17
A high-frequency semiconductor package comprising:
- a base which is made of metal and is a grounding portion;
- a frame-shaped multi-layer wiring resin substrate which is provided on a top surface of the base and in which a first cavity from which the top surface of the base is exposed is formed, wherein the frame-shaped multi-layer wiring resin substrate includes an internal electrode which is formed on a top surface of the multi-layer wiring resin substrate, an external connection terminal which is formed on a bottom surface of the multi-layer wiring resin substrate so as to be insulated from the base, and a through-hole which electrically connects the internal electrode and the external connection terminal;
- a first internal conductor film which covers the top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base;
- a lid which is attached onto the multi-layer wiring resin substrate and seals and covers the first cavity;
- a first groove which is provided from a lateral surface of the external connection terminal to a lateral surface of the multi-layer wiring resin substrate;
- and
- a first lateral surface conductor film which is provided in the first groove,
- wherein the first lateral surface conductor film is provided to be insulated from the first internal conductor film.
A high-frequency semiconductor device comprising:
- a base which is made of metal and is a grounding portion;
- a frame-shaped multi-layer wiring resin substrate which is provided on a top surface of the base and in which a first cavity from which the top surface of the base is exposed is formed, wherein the frame-shaped multi-layer wiring resin substrate includes an internal electrode which is formed on a top surface of the multi-layer wiring resin substrate, an external connection terminal which is formed on a bottom surface of the multi-layer wiring resin substrate so as to be insulated from the base, and a through-hole which electrically connects the internal electrode and the external connection terminal;
- a first internal conductor film which covers the top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base;
- a high-frequency semiconductor element which is arranged in the first cavity and is electrically connected with the multi-layer wiring resin substrate;
- a lid which is attached onto the multi-layer wiring resin substrate and seals and covers the first cavity;
- a first groove which is provided from a lateral surface of the external connection terminal to a lateral surface of the multi-layer wiring resin substrate;
- and
- a first lateral surface conductor film which is provided in the first groove,
- wherein the first lateral surface conductor film is provided to be insulated from the first internal conductor film.
Dependencies are inferred from the claim text.