Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits;
• patterning the mask with a spatio-temporal controlled laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits;
• and
• subsequent to patterning the mask with the spatio-temporal controlled laser beam profile laser scribing process and prior to plasma etching the semiconductor wafer through the gaps, cleaning the exposed regions of the semiconductor wafer with a plasma process.

A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:

• forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits;
• patterning the mask with an elliptical laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits;
• plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits;
• and
• subsequent to patterning the mask with the elliptical laser beam profile laser scribing process and prior to plasma etching the semiconductor wafer through the gaps, cleaning the exposed regions of the semiconductor wafer with a plasma process.