Method for processing at least one crystalline silicon-wafer with a thermal budget or a solar-cell wafer with a thermal budget by a laser beam
AssigneeSolarworld Innovations GmbH
InventorsMartin Kutzer, Joachim Koenig, Matthias Richter
Life of this patent
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Abstract
In different embodiments, a method is provided for processing at least one crystalline Silicon-wafer or a Solar-cell wafer. The method may include: a movement of the wafer with respect to a laser producing a laser beam; and therefore the formation of a laser channel in the wafer by means of a laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel.
Claims20
A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises:
- moving the wafer with respect to a laser producing a laser beam;
- and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel;
- wherein the wafer is moved with respect to the laser outside of the peripheral region with a first speed;
- and
- wherein the wafer is moved with respect to the laser in the peripheral region with at least a second speed which is higher than the first speed.
A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises:
- moving the wafer with respect to a laser producing a laser beam;
- and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel;
- wherein the wafer is applied, outside of the peripheral region, with a first laser beam of a first laser-power;
- and
- wherein the wafer is applied, in the peripheral region, with a laser beam of a second laser-power which is lower than the first laser-power.
A method for processing at least one crystalline silicon-wafer or a solar-cell wafer, wherein the method comprises:
- moving the wafer with respect to a laser producing a laser beam;
- and therefore forming a laser channel in the wafer by means of the laser beam, wherein a thermal budget applied on the wafer by means of the laser beam is reduced in the peripheral region of the wafer, wherein the peripheral region includes a wafer edge, through which the laser beam exits the wafer after formation of the laser channel;
- wherein the wafer is applied, outside of the peripheral region, with a laser beam;
- the focusing of which is in the plane of the wafer, and
- wherein the wafer is applied, within the peripheral region, with a laser beam;
- the focusing of the laser beam is outside of the wafer plane.
Dependencies are inferred from the claim text.