Method of manufacturing semiconductor device using sidewall films for pitch multiplication in forming interconnects

A method for manufacturing a semiconductor device comprising:

• forming a first sidewall film on a lateral surface of a first layer in first and second areas of a semiconductor substrate, the first sidewall film being formed by a first sidewall process and having a first line width;
• removing the first layer;
• forming a first mask on the first sidewall film in the second area after the first layer is removed, the first mask being formed by lithography and having a second line width greater than the first line width;
• forming a pattern by processing a pattern layer above the semiconductor substrate using the first sidewall film and the first mask;
• forming a plurality of second sidewall films on a lateral surface of the pattern, the second sidewall films being formed by a second sidewall formation process and having a third line width equal to or smaller than the first line width;
• and
• processing a processing target layer above the semiconductor substrate using the second sidewall film as a mask, to form a plurality of interconnects;
• processing the processing target layer and, simultaneously, processing a second layer below the processing target layer based on the second sidewall film, to form a semiconductor element connected with the interconnects,
• wherein:
• the interconnects in the first area have at least one of a first interconnect width or a first interconnect interval, the first interconnect interval having a first dimension, and
• the interconnects in the second area have a second interconnect interval, the second interconnect interval having a second dimension greater than the first dimension.

A method for manufacturing a semiconductor device comprising:

• forming a first sidewall film on a lateral surface of a first layer in first and second areas of a semiconductor substrate, the first sidewall film being formed by a first sidewall process and having a first line width:
• removing the first layer;
• forming a first mask on the first sidewall film in the second area after the first layer is removed, the first mask being formed by lithography and having a second line width greater than the first line width;
• forming a pattern by processing a pattern layer above the semiconductor substrate using the first sidewall film and the first mask;
• forming a plurality of second sidewall films on a lateral surface of the pattern, the second sidewall films being formed by a second sidewall formation process and having a third line width equal to or smaller than the first line width;
• and
• processing a processing target layer above the semiconductor substrate using the second sidewall film as a mask, to form a plurality of interconnects;
• wherein:
• a plurality of recesses are formed in the processing target layer based on the second sidewall film,
• the interconnects are embedded in the recess in a self-aligning manner,
• the interconnects in the first area have at least one of a first interconnect width or a first interconnect interval, the first interconnect interval having a first dimension, and
• the interconnects in the second area have a second interconnect interval, the second interconnect interval having a second dimension greater than the first dimension.

A method for manufacturing a semiconductor device, comprising:

• forming a first layer, a second layer, and first patterns above a substrate, the first layer being provided between the second layer and the substrate, the second layer being provided between the first layer and the first patterns;
• forming first sidewalls on side surfaces of the first patterns;
• removing the first patterns;
• forming a first film on at least one of the first sidewalls using a lithography process after the first patterns are removed, a width of the first film being greater than a width of the at least one of the first sidewalls;
• forming second patterns by processing the second layer using a first mask including the first film and the first sidewalls;
• forming second sidewalls on side surfaces of the second patterns;
• removing the second layer;
• and
• forming a second film on at least one of the second sidewalls using a lithography process after the second layer is removed, a width of the second film being greater than a width of the second sidewall;
• and
• forming interconnects by processing the first layer using a second mask including the second sidewalls and the second film.

The method according to 11, wherein:

• the substrate includes a first area and a second area,
• the first sidewalls are formed above the first area and the second area,
• the first film is formed only above the second area, and
• at least adjacent two of the interconnects include first portions above the first area and second portions above the second area, an interval of the first portions of interconnects being larger than an interval of the second portions of interconnects.