Integrated circuits separated by through-wafer trench isolation
AssigneeNXP B.V.
InventorsPeter Gerard Steeneken, Roel Daamen, Gerard Koops, Jan Sonsky, Evelyne Gridelet, Coenraad Cornelis Tak
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Abstract
An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.
Claims15
A method of producing an isolated semiconductor circuit on a semiconductor wafer with through trenches, comprising:
- providing a semiconductor wafer having the semiconductor circuit and a backend;
- applying an etch resistant layer on a surface of the semiconductor wafer opposite the backend;
- forming a trench through the semiconductor wafer to the backend;
- and
- filling the trench with an isolating material.
A method of producing an isolated semiconductor circuit on a semiconductor wafer with through trenches, comprising:
- providing the semiconductor wafer, the semiconductor wafer having a semiconductor circuit;
- depositing a pre-metallic dielectric layer on the semiconductor wafer;
- producing a trench through the pre-metallic dielectric layer and into the semiconductor wafer;
- filling the trench with a dielectric material;
- producing a backend of the semiconductor circuit;
- and
- thinning polishing the wafer so that the trench extends completely through the semiconductor layer.
Dependencies are inferred from the claim text.