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US 9,177,851 B2Granted
Semiconductor device and method for forming the same
AssigneeSK hynix Inc.
InventorKyung Kyu Min
Life of this patent
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Abstract
A semiconductor device and a method for forming the same can block a moving path of electrons between neighbor buried gates. A semiconductor device includes a device isolation film formed to define an active region over a semiconductor substrate. The semiconductor device also includes a plurality of buried gates formed over the active region, and a barrier film formed between neighboring buried gates from the plurality of buried gates.
Claims5
A semiconductor device comprising:
- a device isolation film formed to define an active region over a semiconductor substrate;
- a plurality of buried gates formed over the active region;
- and
- a barrier film formed between neighboring buried gates from the plurality of buried gates,
- wherein the barrier film is formed from a material having a higher oxidation rate than the active region.
2 more elements
Dependencies are inferred from the claim text.