Semiconductor wafer having through-hole vias on saw streets with backside redistribution layer

A method of making a semiconductor device, comprising:

• providing a first semiconductor die;
• depositing an insulating material in a separation area between the first semiconductor die;
• forming a plurality of vias through the insulating material;
• forming a first conductive layer from a first surface of the first semiconductor die to the vias;
• depositing a conductive material in the vias to form a plurality of conductive vias after forming the first conductive layer;
• and
• forming a second conductive layer over the conductive vias and a second surface of the first semiconductor die opposite the first surface of the first semiconductor die.

A method of making a semiconductor device, comprising:

• providing a first semiconductor die;
• depositing an insulating material around a peripheral region of the first semiconductor die and substantially coplanar with an active surface of the first semiconductor die;
• forming a plurality of vias through the insulating material;
• forming a first conductive layer over the active surface of the first semiconductor die between a contact pad on the active surface and the vias;
• and
• forming a second conductive layer over the vias and a second surface of the first semiconductor die opposite the active surface of the first semiconductor die.

A semiconductor device, comprising:

• a plurality of first semiconductor die;
• an insulating material deposited in a die separation area between the first semiconductor die and substantially coplanar with an active surface of the first semiconductor die;
• a plurality of conductive vias formed through the insulating material;
• a first conductive layer extending from a contact pad on the active surface of the first semiconductor die to the conductive vias;
• and
• a second conductive layer formed over the conductive vias and a second surface of the first semiconductor die opposite the active surface of the first semiconductor die.