Semiconductor device and method of forming a reconfigured stackable wafer level package with vertical interconnect

A method of making a semiconductor device, comprising:

• providing a carrier;
• forming a plurality of conductive posts embedded within the carrier;
• removing a portion of the carrier to expose a first portion of a sidewall of the conductive posts;
• disposing a first semiconductor die over a semiconductor die mounting area of the carrier between the conductive posts;
• depositing a first encapsulant around the first semiconductor die and around the conductive posts with a surface of the first encapsulant opposite the carrier coplanar with a surface of the first semiconductor die and a surface of the conductive posts;
• removing a remainder of the carrier to expose a second portion of the sidewall of the conductive posts;
• and
• forming a first interconnect structure over the conductive posts, first encapsulant, and first semiconductor die.

A method of making a semiconductor device, comprising:

• providing a carrier;
• forming a plurality of conductive posts embedded within the carrier;
• removing a portion of the carrier to expose a sidewall of the conductive posts while a portion of the conductive posts remains embedded in the carrier;
• disposing a first semiconductor die over the carrier;
• depositing a first encapsulant around the first semiconductor die and around the conductive posts with a surface of the first encapsulant opposite the carrier coplanar with a surface of the first semiconductor die and the conductive posts;
• removing a remainder of the carrier;
• and
• forming a first interconnect structure over the conductive posts, first encapsulant, and first semiconductor die.

A method of making a semiconductor device, comprising:

• providing a carrier;
• forming a plurality of conductive posts embedded within the carrier;
• removing a portion of the carrier to expose a portion of the conductive posts;
• disposing a first semiconductor die over the carrier;
• depositing a first encapsulant around the first semiconductor die and around the conductive posts with a surface of the first encapsulant coplanar with a surface of the first semiconductor die and the conductive posts;
• removing a remainder of the carrier;
• and
• forming a first interconnect structure over the first semiconductor die, first encapsulant, and conductive posts.