Semiconductor component having a passivation layer and production method
AssigneeInfineon Technologoies AG
InventorsHans-Joachim Schulze, Manfred Pfaffenlehner, Markus Schmitt
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Abstract
A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.
Claims26
A semiconductor component comprising:
- a semiconductor body comprising an inner zone and an edge zone;
- and
- a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone, which comprises a semiconductor oxide and which comprises a defect region having crystal defects that serve as getter centers for contaminations.
A method for producing a semiconductor component comprising a semiconductor body having an inner region and an edge region, comprising:
- producing a passivation layer at least on a surface of the semiconductor body adjoining the edge zone,
- wherein the passivation layer comprises a semiconductor oxide and comprises a defect region having crystal defects that serve as getter centers for contaminations.
Dependencies are inferred from the claim text.