Pattern forming method
AssigneeKabushiki Kaisha Toshiba
InventorYuriko Seino
Life of this patent
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Abstract
According to one embodiment, a pattern forming method includes forming, on an underlying region, a neutral film having an affinity for first and second polymers, forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam, forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers, and performing a predetermined treatment for the block copolymer film to perform a microphase separation.
Claims20
A pattern forming method comprising:
- forming, on an underlying region, a neutral film having an affinity for first and second polymers;
- forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam;
- forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers;
- forming, on the first pinning part, a pattern including first and second portions formed of the first polymer and a third portion provided between the first and second portions and formed of the second polymer, by performing a predetermined treatment for the block copolymer film to perform a microphase separation;
- and
- removing the first and second portions or removing the third portion,
- wherein forming the neutral film includes:
- forming a preliminary neutral film;
- and
- thinning a portion of the preliminary neutral film, which is formed in the first region.
A pattern forming method comprising:
- forming, on an underlying region, a neutral film having an affinity for first and second polymers;
- forming first and second pinning parts having an affinity for the first polymer by irradiating first and second regions of the neutral film with an enemy beam;
- forming, on the neutral film including the first and second pinning parts, a block copolymer film containing the first and second polymers;
- forming a pattern formed of the first polymer, on the first pinning part, on the second pinning part and on a art provided between the first and second pinning arts and separated from the first and second pinning parts, by performing predetermined treatment for the block copolymer film to perform a microphase separation;
- and
- removing the pattern formed of the first polymer,
- wherein forming the neutral film includes:
- forming a preliminary neutral film;
- and
- thinning a portion of the preliminary neutral film, which is formed in the first and second regions.
A pattern forming method comprising:
- forming, on an underlying region, a neutral film having an affinity for first and second polymers;
- forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam;
- forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers;
- forming, on the first pinning part, a pattern including first and second portions formed of the first polymer and a third portion provided between the first and second portions and formed of the second polymer, by performing a predetermined treatment for the block copolymer film to perform a microphase separation;
- and
- removing the first and second portions or removing the third portion,
- wherein a horizontal lamella orientation section is formed in a predetermined region outside the first pinning part in performing the predetermined treatment for the block copolymer film.
Dependencies are inferred from the claim text.