Sub-lithographic semiconductor structures with non-constant pitch
AssigneeGlobalfoundries U.S. 2 LLC
InventorsMarc A. Bergendahl, David V. Horak, Charles W. Koburger, III, Shom Ponoth, Chih-Chao Yang
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Abstract
Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.
Claims12
A method of forming a plurality of fins, comprising:
- forming a first set of fins having a first pitch;
- forming an adjacent fin to the first set of fins,
- forming an intermediate island between the adjacent fin and a nearest fin of the first set of fins, and
- removing the intermediate island so that the adjacent fin is spaced apart from the nearest fin of the first set of fins by a second pitch larger than the first pitch,
- wherein the first set of fins, the intermediate island, and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.
Dependencies are inferred from the claim text.