Deposit removal method
AssigneesTokyo Electron Limited, Kabushiki Kaisha Toshiba
InventorsShigeru Tahara, Eiichi Nishimura, Takanori Matsumoto
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Abstract
One embodiment of the deposit removal method includes: preparing a substrate having a pattern on which a deposit is deposited, the pattern being formed by etching; exposing the substrate to a first atmosphere containing hydrogen fluoride gas; exposing the substrate to oxygen plasma while heating after the step of exposing the substrate to the first atmosphere; and exposing the substrate to a second atmosphere containing hydrogen fluoride gas to remove the deposit on the substrate after the step of exposing the substrate to the oxygen plasma.
Claims10
A deposit removal method, comprising:
- preparing a substrate having a pattern on which a deposit is deposited, the pattern being formed by etching;
- exposing the substrate to oxygen plasma while heating;
- and
- exposing the substrate to a mixed gas of hydrogen fluoride gas and alcohol gas in a chamber while repeating a first period and a second period alternately after the step of exposing the substrate to the oxygen plasma,
- wherein a first partial pressure of alcohol gas in the chamber in the first period enables removal of the deposit by the mixed gas, a second partial pressure of alcohol gas in the chamber in the second period being lower than the first partial pressure,
- wherein the first and second periods are about 5 to 20 seconds, and
- wherein the first and second partial pressures are adjusted by controlling a pumping rate while supplying the mixed gas at a fixed flow rate.
Dependencies are inferred from the claim text.