Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTomoaki Moriwaka
Life of this patent
Estimating the term…
Abstract
The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a thin film transistor with less variation in electric characteristics, which is formed over an insulating substrate using the silicide film. A semiconductor film over which a cap film is formed is irradiated with a laser to be crystallized under the predetermined condition, so that a crystalline semiconductor film including large grain crystals in which orientation of crystal planes is controlled in one direction is formed. The crystalline semiconductor film is used for silicide, whereby a uniform silicide film can be formed.
Claims19
A method for manufacturing a semiconductor device comprising the steps of:
- forming an amorphous silicon film over an insulating substrate;
- forming a cap film over the amorphous silicon film;
- irradiating the amorphous silicon film through the cap film with a pulsed laser beam with repetition rate of 10 MHz or more, while the insulating substrate is scanned, to melt the amorphous silicon film, so that a crystalline silicon film including a crystalline region in which crystal planes in a perpendicular direction to a surface of the crystalline silicon film are orientated along one of {001}, {211}, and {101} is formed in accordance with a scanning speed of the insulating substrate and a power of the laser beam.
A method for manufacturing a semiconductor device comprising the steps of:
- forming an amorphous silicon film over an insulating substrate;
- forming a cap film over the amorphous silicon film;
- irradiating the amorphous silicon film through the cap film with a pulsed laser beam with repetition rate of 10 MHz or more, while the insulating substrate is scanned, to melt the amorphous silicon film, so that a first crystalline silicon film including a crystalline region in which crystal planes in a perpendicular direction to a surface of the first crystalline silicon film are orientated along one of {001}, {211}, and {101} is formed in a first portion and a second crystalline silicon film including a crystalline region in which crystal planes in a perpendicular direction to a surface of the second crystalline silicon film are orientated along another of {001}, {211}, and {101} is formed in a second portion, by changing a scanning speed of the insulating substrate and a power of the laser beam;
- and
- forming a first channel region, a first source region, and a first drain region using the first crystalline silicon film and a second channel region, a second source region, and a second drain region using the second crystalline silicon film.
Dependencies are inferred from the claim text.