Dual silicide regions and method for forming the same

A method for forming dual silicide regions, comprising:

• forming semiconductor regions with a plurality of thicknesses;
• forming a dielectric layer over the semiconductor regions;
• opening up holes in the dielectric layer down to a first depth corresponding with a largest thickness semiconductor region, the first depth leaving a thickness of the dielectric layer over semiconductor regions other than the largest thickness semiconductor region;
• depositing a first material in the holes;
• annealing to cause the first material to form a silicide with the largest thickness semiconductor region;
• extending the holes to reach the semiconductor regions other than the largest thickness semiconductor region;
• depositing a second material in the holes;
• and
• annealing to cause the second material to form a silicide with at least some of the semiconductor regions other than the largest thickness semiconductor region.

A dual silicide device, comprising:

• semiconductor regions having a first thickness and a second thickness different from the first thickness;
• a dielectric layer formed over the semiconductor regions having trenches therein;
• a first silicide region formed at a first depth in the trenches corresponding with a location of one of the first or second thickness;
• a second silicide formed at a second depth in the trenches corresponding with a location of the other of the first or second thickness using a different silicide material than the first silicide;
• and
• conductive materials formed in the openings.