FinFET device having a strained region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Lin Lee, Feng Yuan, Hung-Li Chiang, Chih Chieh Yeh
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Abstract
A method of fabricating a semiconductor device includes providing a substrate having a fin disposed thereon. A gate structure is formed on the fin. The gate structure interfaces at least two sides of the fin. A stress film is formed on the substrate including on the fin. The substrate including the stress film is annealed. The annealing provides a tensile strain in a channel region of the fin. For example, a compressive strain in the stress film may be transferred to form a tensile stress in the channel region of the fin.
Claims20
A method of fabricating a fin-type field effect transistor, comprising:
- providing a substrate having a plurality of fins;
- forming a gate structure on the fin, wherein the gate structure interfaces at least two sides of one or more of the plurality of fins;
- growing an epitaxial region on the substrate, wherein the epitaxial region interfaces with each of the plurality of fins;
- performing a pre-amorphous implantation (PAI) process on the epitaxial region;
- forming a stress layer on the epitaxial region after the PAI process;
- and
- treating the substrate and the stress layer, wherein the treating transfers a stress from the stress layer to the epitaxial region.
A method of fabricating a fin-type field effect transistor, comprising:
- providing a substrate having a first and a second fins;
- growing an contiguous epitaxial region on the first and second fins, wherein the contiguous epitaxial region merges the first and second fins;
- performing a pre-amorphous implantation (PAI) process on the contiguous epitaxial region;
- forming a stress layer on the contiguous epitaxial region after the PAI process;
- and
- annealing the substrate including the stress layer.
A method of fabricating a transistor, comprising:
- growing an epitaxial region on a plurality of fins of a semiconductor substrate, wherein the epitaxial region interfaces with each of the plurality of fins;
- performing a pre-amorphous implantation (PAI) process on the epitaxial region to form an amorphized epitaxial region;
- forming a compressive layer on the amorphized epitaxial region after the PAI process;
- treating the substrate and the compressive layer, wherein the treating transfers a stress from the compressive layer to the amorphized epitaxial region.
Dependencies are inferred from the claim text.